India Launches National Initiative for Indigenous Silicon Carbide (SiC) Power Modules in Ultra-High Voltage VSC-HVDC Transmission
To end reliance on imported semiconductor valves for mega renewable transmission corridors, India’s Ministry of Power and Ministry of Electronics and IT (MeitY) have launched a nationwide mission to develop indigenous 3.3 kV to 6.5 kV Silicon Carbide (SiC) MOSFET power modules for VSC-HVDC converter stations.
- تاريخ النشر: 2026-09-26
- الفئة: Standards & Policy
- المصدر الأصلي: Ministry of Power & MeitY, Government of India
- مدة القراءة: 5 min
Overcoming Global Converter Valve Supply Bottlenecks
With transmission utilities like Power Grid Corporation of India deploying gigawatt-scale corridors—including the 800 kV Barmer-to-Maharashtra renewable link—global converter valve lead times have stretched past 36 months.
The joint initiative funds domestic packaging and fabrication of SiC power electronic modules that deliver 70% lower switching losses and operate at junction temperatures up to 175°C, slashing converter station cooling requirements and footprint.
Interoperability with Heavy HVDC Converter Transformers
The consortium, bringing together central engineering institutes and industrial manufacturers like BHEL, will standardize high-speed gate driver interfaces and transient voltage suppression across ±500 kV and ±800 kV converter transformers.
Pilot field trials on a 400 kV static synchronous compensator (STATCOM) are slated for late 2027, paving the way for commercial HVDC adoption by 2029.